इलेक्ट्रॉनिक पुर्ज़े : HY27UF081G2M-TCB

निर्माता : Hynix Semiconductor

पैकिंग :

पिन :

वर्णन : 1Gbit (128Mx8bit 64Mx16bit) NAND Flash Memory

तापमान : न्यूनतम °C | मैक्स °C

Datasheet : HY27UF081G2M-TCB PDF

• HY27UF081G2A
• HY27UF081G2M
• HY27UF081G2M-F
• HY27UF081G2M-T
• HY27UF081G2M-TCB
• HY27UF081G2M-TCP
• HY27UF081G2M-TCS
• HY27UF081G2M-TEB
• HY27UF081G2M-TEP
• HY27UF081G2M-TES
• HY27UF081G2M-TIB
• HY27UF081G2M-TIP
• HY27UF081G2M-TIS
• HY27UF081G2M-TMB
• HY27UF081G2M-TMP